絲?。?strong>027；WE-MCRI SMT Molded Coupled Inductor

General Information: Ambient Temperature (referring to IR) -40 up to +85 °C Operating Temperature -40 up to +125 °C Storage Conditions (in original packaging)

文件：644.95 Kbytes 頁數(shù)：7 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍爾特伍爾特集團(tuán)

絲印：027N10N6；Package：PG-TDSON-8FL；OptiMOSTM 6 Power-Transistor, 100 V

Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? High avalanche energy rating ? 175°C operating temperature ? Optimized for high frequency switching and synchronous rectification ?

文件：1.33909 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/027l10/marking.html">027L10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 26 m, 28 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? NVMFWS027N10MCL ? Wettable Flank Products ? These Devices are Pb?Free, Halogen Free/BFR Free and are R

文件：152.11 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/027w10/marking.html">027W10；Package：DFN5；MOSFET ??Power, Single N-Channel 100 V, 26 m, 28 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? NVMFWS027N10MCL ? Wettable Flank Products ? These Devices are Pb?Free, Halogen Free/BFR Free and are R

文件：152.11 Kbytes 頁數(shù)：8 Pages

ONSEMI

安森美半導(dǎo)體

絲印：027N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 26.5 m, 21 A

Features ? Small Footprint (5 x 6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：253.59 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

絲印：027N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 27 m, 21 A

Features ? Small Footprint (5 x 6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：253.78 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

絲印：027N04LS；Package：PG-TDSON-8；OptiMOS?? Power-Transistor

文件：386.68 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/027n06l/marking.html">027N06L；Package：PG-TDSON-8；OptiMOSTM Power-Transistor, 60 V

文件：1.14052 Mbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/027n10n/marking.html">027N10N；Package：PG-TSON-8-3；OptiMOSTM Power-Transistor, 100 V

文件：923.03 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

SEMICONDUCTOR FAN HEATER

>>Compact heater >>Integrated thermostat >>Clip fixing >>Optical indicator >>Temperature safety cut-out

文件：204.27 Kbytes 頁數(shù)：1 Pages

STEGO