絲?。?a target="_blank" title="Marking" href="/025a/marking.html">025A；Package：TQFN；Compact Synchronous Buck Regulators

Features ? 2.7V to 5.5V input voltage range ? Very low ON-resistance FET’s - P-channel 36mΩ and N-channel 13mΩ typical values ? High efficiency synchronous buck regulator with up to 95 efficiency ? Pin-to-pin compatible with ISL8023 and ISL8024 ? 0.8 reference accuracy over-temperature/load

文件：1.26659 Mbytes 頁數(shù)：23 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/025n30g/marking.html">025N30G；Package：DFN5x6-8L；NCE N-Channel Enhancement Mode Power MOSFET

Description The NCE025N30G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features

文件：755.89 Kbytes 頁數(shù)：7 Pages

NCEPOWER

新潔能

絲?。?a target="_blank" title="Marking" href="/025p04/marking.html">025P04；Package：SO8FL；MOSFET - Power, Single P-Channel -40 V, 23 m, -34.6 A

Features ? NVMFWS025P04M8L ? Wettable Flanks Product ? Small Footprint for Compact Design 5 x 6 mm ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：199.09 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲印：025P4W；Package：SO8FL；MOSFET - Power, Single P-Channel -40 V, 23 m, -34.6 A

Features ? NVMFWS025P04M8L ? Wettable Flanks Product ? Small Footprint for Compact Design 5 x 6 mm ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：199.09 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲印：025N06CL；Package：LFPAK4；MOSFET – Power, Single N-Channel 60 V, 27.5 m, 21 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：339.78 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/025p04m8l/marking.html">025P04M8L；Package：LFPAK33；MOSFET - Power, Single P-Channel -40 V, 25 m, -32 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：267.04 Kbytes 頁數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/0252c45l/marking.html">0252C45L；Package：TSSOP；FemtoClock Crystal-to-3.3V LVPECL Frequency Synthesizer

文件：237.99 Kbytes 頁數(shù)：17 Pages

IDT

絲印：0252C45L；Package：TSSOP；FemtoClock Crystal-to-3.3V LVPECL Frequency Synthesizer

文件：237.99 Kbytes 頁數(shù)：17 Pages

IDT

絲印：025N08N5；Package：PG-HSOG-8-1；OptiMOSTM 5 Power-Transistor, 80 V

文件：1.28449 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/025n06cl/marking.html">025N06CL；Package：LFPAK4；Power MOSFET 60 V, 27.5 m, 21 A, Single N??hannel

文件：323.8 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體