絲?。?strong>023N；Package：WDFNW6；MOSFET – Power, Dual N-Channel 40 V, 23 m, 25 A

Features ? Small Footprint for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：140.82 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲印：023N08SC；Package：PG-WSON-8；OptiMOSTM 5 Power-Transistor, 80 V

Features ? Dual-side cooled package with lowest Junction-top thermal resistance ? Optimized for synchronous rectification in server and desktop ? 100 avalanche tested ? Superior thermal resistance ? N-channel ? 175°C rated ? Pb-free lead plating; RoHS compliant ? Halogen-free according to

文件：1.08313 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：023N04NS；Package：PG-TO263-3；StrongIRFETTM2 Power-Transistor

Features ? Optimized for wide range of applications ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.05064 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/023n03f2/marking.html">023N03F2；Package：PG-TO252-3；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ? Optimized for a wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：948.9 Kbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

絲印：023N04NS；Package：PG-TO252-3；StrongIRFETTM2 Power-Transistor

Features ? Optimized for wide range of applications ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.0017 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/023n08ns/marking.html">023N08NS；Package：PG-TO263-7；StrongIRFETTM 2 Power-Transistor

Features ? Optimized for a wide range of applications ? N-Channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：961.47 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/023n03f2/marking.html">023N03F2；Package：PG-TO220-3；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ? Optimized for a wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：836.94 Kbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲印：023N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ? Optimized for a wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：1.44413 Mbytes 頁數(shù)：14 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/023n04ng/marking.html">023N04NG；Package：PDFNWB5X6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description T he TF023N04NG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switchin

文件：4.35827 Mbytes 頁數(shù)：6 Pages

TUOFENG

拓鋒半導(dǎo)體