絲?。?strong>022N；Package：WDFNW6；MOSFET - Power, Single N-Channel 60 V, 21 m, 25 A

Features ? Small Footprint for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? Wettable Flank Option for Enhanced Optical Inspection ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：160.82 Kbytes 頁數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/022n12n6/marking.html">022N12N6；Package：PG-TO263-3；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? High avalanche energy rating ? 175°C operating temperature ? Optimized for high frequency switching and synchronous rectification ?

文件：1.14854 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：022N12N6；Package：PG-TO220-3；MOSFET OptiMOSTM 6 Power-Transistor, 120 V

Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? High avalanche energy rating ? 175°C operating temperature ? Optimized for high frequency switching and synchronous rectification ?

文件：1.68825 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/022n10ns/marking.html">022N10NS；Package：PG-HSOF-8；MOSFET StrongIRFETTM 2 Power-Transistor

Features ? Optimized for a wide range of applications ? N-Channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.19444 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：022N6L5；Package：PG-TSON-8；OptiMOSTM 5 Power-Transistor, 60 V

Features ? Optimized for high performance SMPS, e.g. synchronous rectification ? N-channel, logic level ? Very low on-resistance RDS(on) ? Superior thermal resistance ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.12381 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/022n6c5/marking.html">022N6C5；Package：PG-TTFN-9；OptiMOSTM 5 Power-Transistor, 60 V

Features ? Optimized for high performance SMPS, e.g. synchronous rectification ? N-channel, logic level ? Very low on-resistance RDS(on) ? Superior thermal resistance ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.15816 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/022n1n6/marking.html">022N1N6；Package：PG-TSON-8-3；OptiMOSTM 6 Power-Transistor, 100 V

Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? High avalanche energy rating ? 175°C operating temperature ? Optimized for high frequency switching and synchronous rectification ?

文件：904.61 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌