Thin-Film Technology

文件：458.18 Kbytes 頁數(shù)：20 Pages

AVX

Thin-Film Technology

文件：1.23832 Mbytes 頁數(shù)：25 Pages

AVX

絲?。?a target="_blank" title="Marking" href="/020n04tb/marking.html">020N04TB；Package：TO-263；MOSFET

Features - Super low RDS(on) and gate charge. - AEC-Q101 Qualified. - Advanced shielded-gate technology. - Green device available.

文件：530.66 Kbytes 頁數(shù)：6 Pages

COMCHIP

典琦

絲?。?a target="_blank" title="Marking" href="/020n03ls/marking.html">020N03LS；Package：PG-TDSON-8；OptiMOS?? Power-MOSFET

Features ? Fast switching MOSFET for SMPS ? Optimized technology for DC/DC converters ? Qualified according to JEDEC1) for target applications ? N-channel; Logic level ? Excellent gate charge x R DS(on) product (FOM) ? Very low on-resistance R DS(on) ? Superior thermal resistance ? Avalanc

文件：685.38 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲印：020N03MS；Package：PG-TDSON-8；OptiMOS?? M-Series Power-MOSFET

Features ? Optimized for 5V driver application (Notebook, VGA, POL) ? Low FOMSW for High Frequency SMPS ? 100 Avalanche tested ? N-channel ? Very low on-resistance R DS(on) @ V GS=4.5 V ? Excellent gate charge x R DS(on) product (FOM) ? Qualified according to JEDEC1) for target applications

文件：386.66 Kbytes 頁數(shù)：10 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/020n03f2/marking.html">020N03F2；Package：PG-TO252-3；MOSFET StrongIRFET? 2 PowerTransistor, 30 V

Features ? Optimized for wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：946.92 Kbytes 頁數(shù)：13 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/020n03f2/marking.html">020N03F2；Package：PG-TO220-3；MOSFET StrongIRFET?2 Power?Transistor, 30 V

Features ? Optimized for a wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：835.67 Kbytes 頁數(shù)：12 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/020n10n5/marking.html">020N10N5；Package：PG-HSOF-8；OptiMOSTM 5 Power-Transistor, 100 V

Features ? Ideal for high frequency switching and sync. rec. ? Excellent gate charge x RDS(on) product (FOM) ? Very low on-resistance RDS(on) ? N-channel, normal level ? 100 avalanche tested ? Pb-free plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.029609 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲印：020N13N6；Package：PG-HSOF-8；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? 100 avalanche tested ? 175°C operating temperature ? Optimized for motor drives and battery powered applications ? Pb-free lead pla

文件：948.78 Kbytes 頁數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/020n13n6/marking.html">020N13N6；Package：PG-HDSOP-16；MOSFET OptiMOSTM 6 Power-Transistor, 135 V

Features ? N-channel, normal level ? Very low on-resistance RDS(on) ? Excellent gate charge x RDS(on) product (FOM) ? Very low reverse recovery charge (Qrr) ? 100 avalanche tested ? 175°C operating temperature ? Optimized for motor drives and battery powered applications ? Pb-free lead pla

文件：1.37681 Mbytes 頁數(shù)：11 Pages

INFINEON

英飛凌