絲?。?a target="_blank" title="Marking" href="/015n10n5/marking.html">015N10N5；Package：PG-TO263-7；MOSFET OptiMOSTM 5 Power-Transistor, 100 V

Features ? Ideal for high frequency switching and sync. rec. ? Excellent gate charge x RDS(on) product (FOM) ? Very low on-resistance RDS(on) ? N-channel, normal level ? 100% avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.09765 Mbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/015n04ns/marking.html">015N04NS；Package：PG-TO220-3；MOSFET StrongIRFETTM2 Power-Transistor

Features ? Optimized for wide range of applications ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：992.27 Kbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/015n10ns/marking.html">015N10NS；Package：PG-HSOF-8；StrongIRFETTM 2 Power-Transistor

Features ? Optimized for a wide range of applications ? N-Channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：989.32 Kbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/015n03f2/marking.html">015N03F2；Package：PG-TDSON-8；MOSFET StrongIRFET? 2 Power?Transistor, 30 V

Features ? Optimized for a wide range of applications ? N?channel, logic level ? 100% avalanche tested ? 175°C rated ? Pb?free lead plating; RoHS compliant ? Halogen?free according to IEC61249?2?21

文件：1.49247 Mbytes 頁(yè)數(shù)：14 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/015n06lf/marking.html">015N06LF；Package：PG-TDSON-8-FL；OptiMOSTM 5 Linear FET, 60 V

Features ? Ideal for hot-swap, battery protection and e-fuse applications ? Very low on-resistance RDS(on) ? Wide safe operating area SOA ? N-channel, normal level ? 100 avalanche tested ? Pb-free lead plating; RoHS compliant ? Halogen-free according to IEC61249-2-21

文件：1.36138 Mbytes 頁(yè)數(shù)：12 Pages

INFINEON

英飛凌

絲印：015N06N5；Package：sTOLL；MOSFET OptiMOSTM 5 Power-Transistor, 60 V

Features ? Optimized for low voltage motor drives application ? Optimized for battery powered applications ? Enables automated optical solder inspection ? 100 avalanche tested ? N-channel ? 175°C rated ? Pb-free lead plating; RoHS compliant

文件：892.63 Kbytes 頁(yè)數(shù)：11 Pages

INFINEON

英飛凌

絲印：015N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 14.4 m, 35 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：256.16 Kbytes 頁(yè)數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/015n06cl/marking.html">015N06CL；Package：LFPAK8；MOSFET - Power, Dual N-Channel 60 V, 14.4 m, 35 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：255.65 Kbytes 頁(yè)數(shù)：6 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/015n10ns/marking.html">015N10NS；Package：TOLL；100V N-Channel Enhancement Mode MOSFET

Feature ? RDS(ON)

文件：1.037869 Mbytes 頁(yè)數(shù)：6 Pages

PANJIT

強(qiáng)茂

絲印：015W120G34AG；Package：HiP247-4；Automotive-grade silicon carbide Power MOSFET 1200 V, 15 mΩ typ., 129 A in an HiP247-4 package

Features ? AEC-Q101 qualified ? Very fast and robust intrinsic body diode ? Extremely low gate charge and input capacitance ? Very high operating junction temperature capability (TJ = 200 °C) ? Source sensing pin for increased efficiency Applications ? Main inverter (electric traction) ?

文件：499.88 Kbytes 頁(yè)數(shù)：12 Pages

STMICROELECTRONICS

意法半導(dǎo)體