1.0mmPitch ZIF Vertical Through hole Single- sided contact Slide lock

文件：370.29 Kbytes 頁(yè)數(shù)：3 Pages

AVX

絲印：006GI；Package：TSSOP；1.8 VOLT DDR2/800 ZERO DELAY BUFFER

Features ? Packaged in 8-pin TSSOP ? For DDR2/800 applications ? Maximum input clock frequency of 425 MHz ? Output duty cycle of 45/55 ? Operating voltage of 1.8 V ? Industrial temperature range of -40 to +85°C ? Advanced, low-power CMOS process

文件：278.8 Kbytes 頁(yè)數(shù)：11 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/006gi/marking.html">006GI；Package：TSSOP；1.8 VOLT DDR2/800 ZERO DELAY BUFFER

Features ? Packaged in 8-pin TSSOP ? For DDR2/800 applications ? Maximum input clock frequency of 425 MHz ? Output duty cycle of 45/55 ? Operating voltage of 1.8 V ? Industrial temperature range of -40 to +85°C ? Advanced, low-power CMOS process

文件：278.8 Kbytes 頁(yè)數(shù)：11 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/006ail/marking.html">006AIL；Package：VFQFN；VCXO-To-6 LVCMOS Outputs

Features ?Six LVCMOS/LVTTL outputs, 20? nominal output impedance ?Output Q5 can be selected for ÷1 or ÷2 frequency relative to the crystal frequency ?Output frequency range: 12MHz to 31.25MHz ?Crystal pull range: ±90ppm (typical) ?Synchronous output enable places outputs in High- Impedance s

文件：500.44 Kbytes 頁(yè)數(shù)：19 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/006ail/marking.html">006AIL；Package：VFQFN；VCXO-To-6 LVCMOS Outputs

Features ?Six LVCMOS/LVTTL outputs, 20? nominal output impedance ?Output Q5 can be selected for ÷1 or ÷2 frequency relative to the crystal frequency ?Output frequency range: 12MHz to 31.25MHz ?Crystal pull range: ±90ppm (typical) ?Synchronous output enable places outputs in High- Impedance s

文件：500.44 Kbytes 頁(yè)數(shù)：19 Pages

RENESAS

瑞薩

絲?。?a target="_blank" title="Marking" href="/006n08lh/marking.html">006N08LH；Package：LFPAK4；MOSFET - Power, Single N-Channel 80 V, 6.2 m, 77 A

Features ? Small Footprint (5x6 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low QG and Capacitance to Minimize Driver Losses ? LFPAK4 Package, Industry Standard ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：340.17 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/006n06cl/marking.html">006N06CL；Package：LFPAK33；MOSFET ??Power, Single N-Channel 60 V, 6.8 m, 71 A

Features ? Small Footprint (3.3 x 3.3 mm) for Compact Design ? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? AEC?Q101 Qualified and PPAP Capable ? These Devices are Pb?Free and are RoHS Compliant

文件：328.96 Kbytes 頁(yè)數(shù)：7 Pages

ONSEMI

安森美半導(dǎo)體

絲印：006R；Package：MSOP-8；6-Channel ESD Protection Array

Product Description The PACDN006 is a diode array designed to provide six channels of ESD protection for electronic components or subsystems. Each channel consists of a pair of diodes that steer an ESD current pulse to either the positive (VP) or negative (VN) supply. The PACDN006 protects agains

文件：117.69 Kbytes 頁(yè)數(shù)：9 Pages

ONSEMI

安森美半導(dǎo)體

絲?。?a target="_blank" title="Marking" href="/006e2l5/marking.html">006E2L5；Package：PG-TSON-8-4；OptiMOSTM 5 Power-Transistor, 25 V

文件：1.42948 Mbytes 頁(yè)數(shù)：13 Pages

INFINEON

英飛凌

絲?。?a target="_blank" title="Marking" href="/006e2c5/marking.html">006E2C5；Package：PG-TTFN-9-1；OptiMOSTM 5 Power-Transistor, 25 V

文件：1.02871 Mbytes 頁(yè)數(shù)：13 Pages

INFINEON

英飛凌