絲印：-MK；Package：SOT-143B；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

文件：159.22 Kbytes 頁數(shù)：16 Pages

PHI

PHI

絲?。?strong>-MK；Package：SOT-143B；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range,

文件：306.4 Kbytes 頁數(shù)：13 Pages

恩XP

絲?。?strong>-MK；Package：SOT-143B；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range,

文件：306.4 Kbytes 頁數(shù)：13 Pages

恩XP

絲?。?strong>-MK；Package：SOT-143B；NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES ? High power gain ? Low noise figure ? High transition frequency ? Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

文件：159.22 Kbytes 頁數(shù)：16 Pages

PHI

PHI